Wagner JB - Search Results

1

Optical properties of rotationally twinned InP nanowire heterostructures.

Bao J, Bell DC, Capasso F, Wagner JB, Mårtensson T, Trägårdh J, Samuelson L. Bao J, et al. Among authors: wagner jb. Nano Lett. 2008 Mar;8(3):836-41. doi: 10.1021/nl072921e. Epub 2008 Feb 15. Nano Lett. 2008. PMID: 18275163

2

A radio frequency single-electron transistor based on an InAs/InP heterostructure nanowire.

Nilsson HA, Duty T, Abay S, Wilson C, Wagner JB, Thelander C, Delsing P, Samuelson L. Nilsson HA, et al. Among authors: wagner jb. Nano Lett. 2008 Mar;8(3):872-5. doi: 10.1021/nl0731062. Epub 2008 Feb 27. Nano Lett. 2008. PMID: 18302328

3

Transients in the formation of nanowire heterostructures.

Fröberg LE, Wacaser BA, Wagner JB, Jeppesen S, Ohlsson BJ, Deppert K, Samuelson L. Fröberg LE, et al. Among authors: wagner jb. Nano Lett. 2008 Nov;8(11):3815-8. doi: 10.1021/nl802149v. Epub 2008 Sep 24. Nano Lett. 2008. PMID: 18811210

4

High-performance single nanowire tunnel diodes.

Wallentin J, Persson JM, Wagner JB, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Among authors: wagner jb. Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b. Nano Lett. 2010. PMID: 20163125

5

Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System.

Berg A, Yazdi S, Nowzari A, Storm K, Jain V, Vainorius N, Samuelson L, Wagner JB, Borgström MT. Berg A, et al. Among authors: wagner jb. Nano Lett. 2016 Jan 13;16(1):656-62. doi: 10.1021/acs.nanolett.5b04401. Epub 2015 Dec 31. Nano Lett. 2016. PMID: 26708274

6

Phase segregation in AlInP shells on GaAs nanowires.

Sköld N, Wagner JB, Karlsson G, Hernán T, Seifert W, Pistol ME, Samuelson L. Sköld N, et al. Among authors: wagner jb. Nano Lett. 2006 Dec;6(12):2743-7. doi: 10.1021/nl061692d. Nano Lett. 2006. PMID: 17163698

7

Giant, level-dependent g factors in InSb nanowire quantum dots.

Nilsson HA, Caroff P, Thelander C, Larsson M, Wagner JB, Wernersson LE, Samuelson L, Xu HQ. Nilsson HA, et al. Among authors: wagner jb. Nano Lett. 2009 Sep;9(9):3151-6. doi: 10.1021/nl901333a. Nano Lett. 2009. PMID: 19736971

8

InAs1-xPx nanowires for device engineering.

Persson AI, Björk MT, Jeppesen S, Wagner JB, Wallenberg LR, Samuelson L. Persson AI, et al. Among authors: wagner jb. Nano Lett. 2006 Mar;6(3):403-7. doi: 10.1021/nl052181e. Nano Lett. 2006. PMID: 16522031

9

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.

Suyatin DB, Jain V, Nebol'sin VA, Trägårdh J, Messing ME, Wagner JB, Persson O, Timm R, Mikkelsen A, Maximov I, Samuelson L, Pettersson H. Suyatin DB, et al. Among authors: wagner jb. Nat Commun. 2014;5:3221. doi: 10.1038/ncomms4221. Nat Commun. 2014. PMID: 24488034 Free article.

10

High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy.

Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE. Caroff P, et al. Among authors: wagner jb. Small. 2008 Jul;4(7):878-82. doi: 10.1002/smll.200700892. Small. 2008. PMID: 18576282 No abstract available.

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