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zhihua xia
(12 results)?
Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs.
Opt Express. 2024 Aug 12;32(17):29474-29482. doi: 10.1364/OE.531223.
Opt Express. 2024.
PMID: 39573136
Free article.
Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer.
Xing K, Hu J, Pan Z, Xia Z, Jin Z, Wang L, Jiang X, Wang H, Zeng H, Wang X.
Xing K, et al. Among authors: xia z.
Opt Express. 2024 Mar 25;32(7):11377-11386. doi: 10.1364/OE.518741.
Opt Express. 2024.
PMID: 38570986
Free article.
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