High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes

Chong-an Di; Gui Yu; Yunqi Liu; Xinjun Xu; Dacheng Wei; Yabin Song; Yanming Sun; Ying Wang; Daoben Zhu; Jian Liu; Xinyu Liu; Dexin Wu

doi:10.1021/ja066092v

High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes

J Am Chem Soc. 2006 Dec 27;128(51):16418-9. doi: 10.1021/ja066092v.

Authors

Chong-an Di¹, Gui Yu, Yunqi Liu, Xinjun Xu, Dacheng Wei, Yabin Song, Yanming Sun, Ying Wang, Daoben Zhu, Jian Liu, Xinyu Liu, Dexin Wu

Affiliation

¹ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P.R. China.

PMID: 17177348
DOI: 10.1021/ja066092v

Abstract

The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source-drain (D-S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D-S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.