Radiation image sensor properties affect the dose of radiation that patients are exposed to in a clinical setting. Numerous radiation imaging systems use scintillators as materials that absorb radiation. Rare-earth scintillators produced from elements such as gadolinium, yttrium, lutetium, and lanthanum have been investigated to improve the properties of radiation imaging systems. Although such rare-earth scintillators are manufactured with a bulk structure, they exhibit low resolution and low efficiency when they are used as conversion devices. Nanoscintillators have been proposed and researched as a possible solution to these problems. According to the research, the optical properties and size of fine scintillators are affected by the sintering temperature used to produce nanoscintillators instead of the existing bulk-structured scintillators. Therefore, the main purpose of this research is to develop radiation-imaging sensors based on nanoscintillators in order to evaluate the quantitative properties of various scintillators produced under various conditions such as sintering temperature. This is accomplished by measuring acquired phantom images, and modulation transfer functions (MTFs) for complementary-symmetry metal-oxide-semiconductor (CMOS) image sensors under the same X-ray conditions. Low-temperature solution combustion was used to produce fine scintillators consisting of 5 wt% of europium as an activator dopant in a Gd2O3 scintillator host. Variations in the characteristics of the fine scintillators were investigated. The characteristics of fine scintillators produced at various sintering temperatures (i.e., 600, 800, or 1000 degrees C) and with a europium concentration of 0.5 wt% were also analyzed to determine the optimal conditions for synthesizing the fine scintillators.