Ferroelectric-gated MoSe2photodetectors with high photoresponsivity

Qijie Yan; Jiaxin Cheng; Weike Wang; Mengjiao Sun; Yanling Yin; Yuehua Peng; Weichang Zhou; Dongsheng Tang

doi:10.1088/1361-648X/ac94af

Ferroelectric-gated MoSe₂photodetectors with high photoresponsivity

J Phys Condens Matter. 2022 Oct 5;34(47). doi: 10.1088/1361-648X/ac94af.

Authors

Qijie Yan¹, Jiaxin Cheng¹, Weike Wang^{1

2}, Mengjiao Sun¹, Yanling Yin¹, Yuehua Peng¹, Weichang Zhou¹, Dongsheng Tang¹

Affiliations

¹ Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Electronics Science, Hunan Normal University, Changsha, Hunan 410081, People's Republic of China.
² Nanchang Institute of Technology, Nanchang, Jiangxi 330044, People's Republic of China.

PMID: 36150377
DOI: 10.1088/1361-648X/ac94af

Abstract

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe₂thin flakes on ferroelectric 0.7PbMg_1/3Nb_2/3O₃-0.3PbTiO₃(PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W^-1and the detectivity to 3.2 × 10¹⁰Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.

Keywords: MoSe2; PMN-PT; ferroelectric; photodetector.