Size-controlled InGaN/GaN nanorod array fabrication and optical characterization

Opt Express. 2013 Jul 15;21(14):16854-62. doi: 10.1364/OE.21.016854.

Abstract

We demonstrate a cost-effective top-down approach for fabricating InGaN/GaN nanorod arrays using a wet treatment process in a KOH solution. The average diameter of the as-etched nanorods was effectively reduced from 420 nm to 180 nm. The spatial strain distribution was then investigated by measuring the high-resolution cathodoluminescence directly on top of the nanorods. The smaller nanorods showed a higher internal quantum efficiency and lower potential fluctuation, which can subsequently be exploited for high-efficiency photonic devices.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Birefringence
  • Crystallization / methods*
  • Elastic Modulus
  • Gallium / chemistry*
  • Indium / chemistry*
  • Light
  • Materials Testing
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure*
  • Particle Size

Substances

  • Indium
  • gallium nitride
  • Gallium
  • indium nitride