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X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures.
Phys Rev B Condens Matter. 1994 May 15;49(19):13542-13553. doi: 10.1103/physrevb.49.13542.
Phys Rev B Condens Matter. 1994.
PMID: 10010290
No abstract available.
Electronic structure of semiconductor oxides: InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3.
Sferco SJ, Allan G, Lefebvre I I, Lannoo M, Bergignat E, Hollinger G.
Sferco SJ, et al. Among authors: bergignat e.
Phys Rev B Condens Matter. 1990 Dec 15;42(17):11232-11239. doi: 10.1103/physrevb.42.11232.
Phys Rev B Condens Matter. 1990.
PMID: 9995408
No abstract available.
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Electronic-structure and local-order study of GexSe.
Bergignat E, Hollinger G, Chermette H, Pertosa P, Lohez D, Lannoo M, Bensoussan M.
Bergignat E, et al.
Phys Rev B Condens Matter. 1988 Mar 15;37(9):4506-4513. doi: 10.1103/physrevb.37.4506.
Phys Rev B Condens Matter. 1988.
PMID: 9945109
No abstract available.
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