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Photoluminescence model of sulfur passivated p-InP nanowires.
Nanotechnology. 2012 Aug 10;23(31):315703. doi: 10.1088/0957-4484/23/31/315703. Epub 2012 Jul 13.
Nanotechnology. 2012.
PMID: 22797486
Temperature-dependent electron mobility in InAs nanowires.
Gupta N, Song Y, Holloway GW, Sinha U, Haapamaki CM, Lapierre RR, Baugh J.
Gupta N, et al. Among authors: haapamaki cm.
Nanotechnology. 2013 Jun 7;24(22):225202. doi: 10.1088/0957-4484/24/22/225202. Epub 2013 Apr 30.
Nanotechnology. 2013.
PMID: 23633474
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Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures.
Haapamaki CM, Lapierre RR.
Haapamaki CM, et al.
Nanotechnology. 2011 Aug 19;22(33):335602. doi: 10.1088/0957-4484/22/33/335602. Epub 2011 Jul 25.
Nanotechnology. 2011.
PMID: 21788682
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