Hogg RA - Search Results

1

Quantum dot selective area intermixing for broadband light sources.

Zhou KJ, Jiang Q, Zhang ZY, Chen SM, Liu HY, Lu ZH, Kennedy K, Matcher SJ, Hogg RA. Zhou KJ, et al. Among authors: hogg ra. Opt Express. 2012 Nov 19;20(24):26950-7. doi: 10.1364/OE.20.026950. Opt Express. 2012. PMID: 23187550 Free article.

2

A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap.

Zhang ZY, Jiang Q, Luxmoore IJ, Hogg RA. Zhang ZY, et al. Among authors: hogg ra. Nanotechnology. 2009 Feb 4;20(5):055204. doi: 10.1088/0957-4484/20/5/055204. Epub 2009 Jan 9. Nanotechnology. 2009. PMID: 19417341

3

Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.

Zhang ZY, Jiang Q, Hopkinson M, Hogg RA. Zhang ZY, et al. Among authors: hogg ra. Opt Express. 2010 Mar 29;18(7):7055-63. doi: 10.1364/OE.18.007055. Opt Express. 2010. PMID: 20389726 Free article.

4

Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process.

Zhang ZY, Hogg RA, Xu B, Jin P, Wang ZG. Zhang ZY, et al. Among authors: hogg ra. Opt Lett. 2008 Jun 1;33(11):1210-2. doi: 10.1364/ol.33.001210. Opt Lett. 2008. PMID: 18516176

5

1.55 µm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser.

Zhang ZY, Oehler AE, Resan B, Kurmulis S, Zhou KJ, Wang Q, Mangold M, Süedmeyer T, Keller U, Weingarten KJ, Hogg RA. Zhang ZY, et al. Among authors: hogg ra. Sci Rep. 2012;2:477. doi: 10.1038/srep00477. Epub 2012 Jun 28. Sci Rep. 2012. PMID: 22745898 Free PMC article.

6

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures.

Chen S, Li W, Zhang Z, Childs D, Zhou K, Orchard J, Kennedy K, Hugues M, Clarke E, Ross I, Wada O, Hogg R. Chen S, et al. Nanoscale Res Lett. 2015 Dec;10(1):1049. doi: 10.1186/s11671-015-1049-2. Epub 2015 Aug 25. Nanoscale Res Lett. 2015. PMID: 26303141 Free PMC article.

7

Near-infrared and mid-infrared semiconductor broadband light emitters.

Hou CC, Chen HM, Zhang JC, Zhuo N, Huang YQ, Hogg RA, Childs DT, Ning JQ, Wang ZG, Liu FQ, Zhang ZY. Hou CC, et al. Among authors: hogg ra. Light Sci Appl. 2018 Mar 23;7:17170. doi: 10.1038/lsa.2017.170. eCollection 2018. Light Sci Appl. 2018. PMID: 30839527 Free PMC article.

8

10 GHz pulse repetition rate Er:Yb:glass laser modelocked with quantum dot semiconductor saturable absorber mirror.

Resan B, Kurmulis S, Zhang ZY, Oehler AE, Markovic V, Mangold M, Südmeyer T, Keller U, Hogg RA, Weingarten KJ. Resan B, et al. Among authors: hogg ra. Appl Opt. 2016 May 10;55(14):3776-80. doi: 10.1364/AO.55.003776. Appl Opt. 2016. PMID: 27168291

9

Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm.

Kitamura S, Senshu M, Katsuyama T, Hino Y, Ozaki N, Ohkouchi S, Sugimoto Y, Hogg RA. Kitamura S, et al. Among authors: hogg ra. Nanoscale Res Lett. 2015 May 27;10:231. doi: 10.1186/s11671-015-0941-0. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 26034422 Free PMC article.

10

Broadband THz absorption spectrometer based on excitonic nonlinear optical effects.

Majeed A, Ivanov P, Stevens B, Clarke E, Butler I, Childs D, Kojima O, Hogg R. Majeed A, et al. Light Sci Appl. 2019 Mar 13;8:29. doi: 10.1038/s41377-019-0137-y. eCollection 2019. Light Sci Appl. 2019. PMID: 30886706 Free PMC article.

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