Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.
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Bilousov OV, et al. Among authors: geaney h.
ACS Appl Mater Interfaces. 2014 Oct 22;6(20):17954-64. doi: 10.1021/am504786b. Epub 2014 Oct 13.
ACS Appl Mater Interfaces. 2014.
PMID: 25271924