Pan L - Search Results

1

A resistance-switchable and ferroelectric metal-organic framework.

Pan L, Liu G, Li H, Meng S, Han L, Shang J, Chen B, Platero-Prats AE, Lu W, Zou X, Li RW. Pan L, et al. J Am Chem Soc. 2014 Dec 17;136(50):17477-83. doi: 10.1021/ja508592f. Epub 2014 Dec 3. J Am Chem Soc. 2014. PMID: 25420196

2

Observation of conductance quantization in oxide-based resistive switching memory.

Zhu X, Su W, Liu Y, Hu B, Pan L, Lu W, Zhang J, Li RW. Zhu X, et al. Among authors: pan l. Adv Mater. 2012 Aug 2;24(29):3941-6. doi: 10.1002/adma.201201506. Epub 2012 Jun 18. Adv Mater. 2012. PMID: 22707001 Free article.

3

A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching.

Hu B, Zhu X, Chen X, Pan L, Peng S, Wu Y, Shang J, Liu G, Yan Q, Li RW. Hu B, et al. Among authors: pan l. J Am Chem Soc. 2012 Oct 24;134(42):17408-11. doi: 10.1021/ja307933t. Epub 2012 Oct 12. J Am Chem Soc. 2012. PMID: 23035664

4

Direct observation of lithium-ion transport under an electrical field in LixCoO2 nanograins.

Zhu X, Ong CS, Xu X, Hu B, Shang J, Yang H, Katlakunta S, Liu Y, Chen X, Pan L, Ding J, Li RW. Zhu X, et al. Among authors: pan l. Sci Rep. 2013;3:1084. doi: 10.1038/srep01084. Epub 2013 Jan 17. Sci Rep. 2013. PMID: 23330065 Free PMC article.

5

Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Zhang W, Wang C, Liu G, Zhu X, Chen X, Pan L, Tan H, Xue W, Ji Z, Wang J, Chen Y, Li RW. Zhang W, et al. Among authors: pan l. Chem Commun (Camb). 2014 Oct 14;50(80):11856-8. doi: 10.1039/c4cc04696j. Chem Commun (Camb). 2014. PMID: 25147878

6

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.

Zhang C, Shang J, Xue W, Tan H, Pan L, Yang X, Guo S, Hao J, Liu G, Li RW. Zhang C, et al. Among authors: pan l. Chem Commun (Camb). 2016 Apr 4;52(26):4828-31. doi: 10.1039/c6cc00989a. Epub 2016 Mar 11. Chem Commun (Camb). 2016. PMID: 26967024

7

Reversible Luminescence Modulation upon an Electric Field on a Full Solid-State Device Based on Lanthanide Dimers.

Yi X, Shang J, Pan L, Tan H, Chen B, Liu G, Huang G, Bernot K, Guillou O, Li RW. Yi X, et al. Among authors: pan l. ACS Appl Mater Interfaces. 2016 Jun 22;8(24):15551-6. doi: 10.1021/acsami.6b04451. Epub 2016 Jun 8. ACS Appl Mater Interfaces. 2016. PMID: 27244645

8

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

Shang J, Xue W, Ji Z, Liu G, Niu X, Yi X, Pan L, Zhan Q, Xu XH, Li RW. Shang J, et al. Among authors: pan l. Nanoscale. 2017 Jun 1;9(21):7037-7046. doi: 10.1039/c6nr08687j. Nanoscale. 2017. PMID: 28252131

9

A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition.

Xue W, Liu G, Zhong Z, Dai Y, Shang J, Liu Y, Yang H, Yi X, Tan H, Pan L, Gao S, Ding J, Xu XH, Li RW. Xue W, et al. Among authors: pan l. Adv Mater. 2017 Oct;29(39). doi: 10.1002/adma.201702162. Epub 2017 Aug 21. Adv Mater. 2017. PMID: 28833612

10

Light-Gated Memristor with Integrated Logic and Memory Functions.

Tan H, Liu G, Yang H, Yi X, Pan L, Shang J, Long S, Liu M, Wu Y, Li RW. Tan H, et al. Among authors: pan l. ACS Nano. 2017 Nov 28;11(11):11298-11305. doi: 10.1021/acsnano.7b05762. Epub 2017 Oct 18. ACS Nano. 2017. PMID: 29028312

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