Ueda S - Search Results

1

Water Durable Electride Y₅Si₃: Electronic Structure and Catalytic Activity for Ammonia Synthesis.

Lu Y, Li J, Tada T, Toda Y, Ueda S, Yokoyama T, Kitano M, Hosono H. Lu Y, et al. Among authors: ueda s. J Am Chem Soc. 2016 Mar 30;138(12):3970-3. doi: 10.1021/jacs.6b00124. Epub 2016 Mar 18. J Am Chem Soc. 2016. PMID: 26972257

2

Narrow bandgap in β-BaZn₂As₂ and its chemical origins.

Xiao Z, Hiramatsu H, Ueda S, Toda Y, Ran FY, Guo J, Lei H, Matsuishi S, Hosono H, Kamiya T. Xiao Z, et al. Among authors: ueda s. J Am Chem Soc. 2014 Oct 22;136(42):14959-65. doi: 10.1021/ja507890u. Epub 2014 Oct 10. J Am Chem Soc. 2014. PMID: 25255380

3

Coexistence of Magnetic Order and Ferroelectricity at 2D Nanosheet Interfaces.

Li BW, Osada M, Ebina Y, Ueda S, Sasaki T. Li BW, et al. Among authors: ueda s. J Am Chem Soc. 2016 Jun 22;138(24):7621-5. doi: 10.1021/jacs.6b02722. Epub 2016 Jun 13. J Am Chem Soc. 2016. PMID: 27295544

4

A-Site and B-Site Charge Orderings in an s-d Level Controlled Perovskite Oxide PbCoO₃.

Sakai Y, Yang J, Yu R, Hojo H, Yamada I, Miao P, Lee S, Torii S, Kamiyama T, Ležaić M, Bihlmayer G, Mizumaki M, Komiyama J, Mizokawa T, Yamamoto H, Nishikubo T, Hattori Y, Oka K, Yin Y, Dai J, Li W, Ueda S, Aimi A, Mori D, Inaguma Y, Hu Z, Uozumi T, Jin C, Long Y, Azuma M. Sakai Y, et al. Among authors: ueda s. J Am Chem Soc. 2017 Mar 29;139(12):4574-4581. doi: 10.1021/jacs.7b01851. Epub 2017 Mar 15. J Am Chem Soc. 2017. PMID: 28240901

5

Chemical Design and Example of Transparent Bipolar Semiconductors.

Arai T, Iimura S, Kim J, Toda Y, Ueda S, Hosono H. Arai T, et al. Among authors: ueda s. J Am Chem Soc. 2017 Nov 29;139(47):17175-17180. doi: 10.1021/jacs.7b09806. Epub 2017 Nov 17. J Am Chem Soc. 2017. PMID: 29115833

6

High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design.

Matsuzaki K, Harada K, Kumagai Y, Koshiya S, Kimoto K, Ueda S, Sasase M, Maeda A, Susaki T, Kitano M, Oba F, Hosono H. Matsuzaki K, et al. Among authors: ueda s. Adv Mater. 2018 Aug;30(31):e1801968. doi: 10.1002/adma.201801968. Epub 2018 Jun 19. Adv Mater. 2018. PMID: 29920799

7

High-Performance Indium Gallium Tin Oxide Transistors with an Al₂O₃ Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al₂O₃ Dielectric Film.

Choi CH, Kim T, Ueda S, Shiah YS, Hosono H, Kim J, Jeong JK. Choi CH, et al. Among authors: ueda s. ACS Appl Mater Interfaces. 2021 Jun 23;13(24):28451-28461. doi: 10.1021/acsami.1c04210. Epub 2021 Jun 11. ACS Appl Mater Interfaces. 2021. PMID: 34111928

8

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO₃/LaNiO₃/LaAlO₃ heterostructure.

Kimura M, He X, Katase T, Tadano T, Tomczak JM, Minohara M, Aso R, Yoshida H, Ide K, Ueda S, Hiramatsu H, Kumigashira H, Hosono H, Kamiya T. Kimura M, et al. Among authors: ueda s. Nano Lett. 2021 Nov 10;21(21):9240-9246. doi: 10.1021/acs.nanolett.1c03143. Epub 2021 Oct 28. Nano Lett. 2021. PMID: 34709840 Free PMC article.

9

Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution.

He X, Zhang H, Nose T, Katase T, Tadano T, Ide K, Ueda S, Hiramatsu H, Hosono H, Kamiya T. He X, et al. Among authors: ueda s. Adv Sci (Weinh). 2022 May;9(13):e2105958. doi: 10.1002/advs.202105958. Epub 2022 Mar 8. Adv Sci (Weinh). 2022. PMID: 35257520 Free PMC article.

10

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway.

Shi Y, Tsuji M, Cho H, Ueda S, Kim J, Hosono H. Shi Y, et al. Among authors: ueda s. ACS Nano. 2024 Apr 2;18(13):9736-9745. doi: 10.1021/acsnano.4c02101. Epub 2024 Mar 22. ACS Nano. 2024. PMID: 38518185 Free PMC article.

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