Stoica T - Search Results

1

Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting.

Jin J, Stoica T, Trellenkamp S, Chen Y, Anttu N, Migunov V, Kawabata RM, Buenconsejo PJ, Lam YM, Haas F, Hardtdegen H, Grützmacher D, Kardynał BE. Jin J, et al. Among authors: stoica t. ACS Appl Mater Interfaces. 2016 Aug 31;8(34):22484-92. doi: 10.1021/acsami.6b05581. Epub 2016 Aug 19. ACS Appl Mater Interfaces. 2016. PMID: 27504951

2

Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching.

Haab A, Mikulics M, Sutter E, Jin J, Stoica T, Kardynal B, Rieger T, Grützmacher D, Hardtdegen H. Haab A, et al. Among authors: stoica t. Nanotechnology. 2014 Jun 27;25(25):255301. doi: 10.1088/0957-4484/25/25/255301. Epub 2014 Jun 4. Nanotechnology. 2014. PMID: 24896155

3

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Schäfer-Nolte EO, Stoica T, Gotschke T, Limbach FA, Sutter E, Sutter P, Grützmacher D, Calarco R. Schäfer-Nolte EO, et al. Among authors: stoica t. Nanotechnology. 2010 Aug 6;21(31):315702. doi: 10.1088/0957-4484/21/31/315702. Epub 2010 Jul 15. Nanotechnology. 2010. PMID: 20634570

4

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires.

Stoica T, Sutter E, Meijers RJ, Debnath RK, Calarco R, Lüth H, Grützmacher D. Stoica T, et al. Small. 2008 Jun;4(6):751-4. doi: 10.1002/smll.200700936. Small. 2008. PMID: 18535990 No abstract available.

5

Growth, characterization, and transport properties of ternary (Bi_1-x Sb _x )₂Te₃ topological insulator layers.

Weyrich C, Drögeler M, Kampmeier J, Eschbach M, Mussler G, Merzenich T, Stoica T, Batov IE, Schubert J, Plucinski L, Beschoten B, Schneider CM, Stampfer C, Grützmacher D, Schäpers T. Weyrich C, et al. Among authors: stoica t. J Phys Condens Matter. 2016 Dec 14;28(49):495501. doi: 10.1088/0953-8984/28/49/495501. Epub 2016 Oct 17. J Phys Condens Matter. 2016. PMID: 27749271

6

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

Schumann T, Gotschke T, Limbach F, Stoica T, Calarco R. Schumann T, et al. Among authors: stoica t. Nanotechnology. 2011 Mar 4;22(9):095603. doi: 10.1088/0957-4484/22/9/095603. Epub 2011 Jan 27. Nanotechnology. 2011. PMID: 21270490

7

Properties of uniform diameter InN nanowires obtained under Si doping.

Gotschke T, Schäfer-Nolte EO, Caterino R, Limbach F, Stoica T, Sutter E, Jeganathan K, Calarco R. Gotschke T, et al. Among authors: stoica t. Nanotechnology. 2011 Mar 25;22(12):125704. doi: 10.1088/0957-4484/22/12/125704. Epub 2011 Feb 14. Nanotechnology. 2011. PMID: 21317500

8

Longer InN phonon lifetimes in nanowires.

Domènech-Amador N, Cuscó R, Artús L, Stoica T, Calarco R. Domènech-Amador N, et al. Among authors: stoica t. Nanotechnology. 2012 Feb 1;23(8):085702. doi: 10.1088/0957-4484/23/8/085702. Nanotechnology. 2012. PMID: 22293460

9

Photoluminescence and intrinsic properties of MBE-grown InN nanowires.

Stoica T, Meijers RJ, Calarco R, Richter T, Sutter E, Lüth H. Stoica T, et al. Nano Lett. 2006 Jul;6(7):1541-7. doi: 10.1021/nl060547x. Nano Lett. 2006. PMID: 16834446 Free article.

10

Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H. Calarco R, et al. Among authors: stoica t. Nano Lett. 2007 Aug;7(8):2248-51. doi: 10.1021/nl0707398. Epub 2007 Jun 29. Nano Lett. 2007. PMID: 17602537

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