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Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.
Nanoscale. 2017 Feb 2;9(5):1793-1798. doi: 10.1039/c6nr07671h.
Nanoscale. 2017.
PMID: 27906408
Direct identification of the conducting channels in a functioning memristive device.
Strachan JP, Pickett MD, Yang JJ, Aloni S, David Kilcoyne AL, Medeiros-Ribeiro G, Stanley Williams R.
Strachan JP, et al. Among authors: david kilcoyne al.
Adv Mater. 2010 Aug 24;22(32):3573-7. doi: 10.1002/adma.201000186.
Adv Mater. 2010.
PMID: 20512814
No abstract available.
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