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Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors.
Nano Lett. 2019 Feb 13;19(2):1289-1294. doi: 10.1021/acs.nanolett.8b04865. Epub 2019 Jan 29.
Nano Lett. 2019.
PMID: 30673247
Free PMC article.
UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy.
Brubaker MD, Genter KL, Roshko A, Blanchard PT, Spann BT, Harvey TE, Bertness KA.
Brubaker MD, et al. Among authors: genter kl.
Nanotechnology. 2019 Jun 7;30(23):234001. doi: 10.1088/1361-6528/ab07ed. Epub 2019 Feb 18.
Nanotechnology. 2019.
PMID: 30776789
Free PMC article.
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Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth.
Brubaker MD, Genter KL, Weber JC, Spann BT, Roshko A, Blanchard PT, Harvey TE, Bertness KA.
Brubaker MD, et al. Among authors: genter kl.
Proc SPIE Int Soc Opt Eng. 2018;10725:10.1117/12.2322832. doi: 10.1117/12.2322832.
Proc SPIE Int Soc Opt Eng. 2018.
PMID: 33343056
Free PMC article.
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