Kang M - Search Results

1

Variability-Aware Simulation Strategy for Gate-All-Around Vertical Field Effect Transistor.

Ko K, Kang M, Jeon J, Shin H. Ko K, et al. Among authors: kang m. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6715-6721. doi: 10.1166/jnn.2019.17105. J Nanosci Nanotechnol. 2019. PMID: 31027016

2

Repurposing compact discs as master molds to fabricate high-performance organic nanowire field-effect transistors.

Kim K, Cho J, Jhon H, Jeon J, Kang M, Eon Park C, Lee J, Kyu An T. Kim K, et al. Among authors: kang m. Nanotechnology. 2017 May 19;28(20):205304. doi: 10.1088/1361-6528/aa6909. Nanotechnology. 2017. PMID: 28445166

3

Analysis on Self Heating Effect for a Trenched Source/Drain Structure in Triple-Stacked Nanowire FET.

Kim H, Son DK, Myeong I, Kang M, Shin H. Kim H, et al. Among authors: kang m. J Nanosci Nanotechnol. 2019 Apr 1;19(4):2281-2284. doi: 10.1166/jnn.2019.15811. J Nanosci Nanotechnol. 2019. PMID: 30486982

4

Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor.

Lee JK, Woo C, Kim J, Kang M, Jeon J, Shin H. Lee JK, et al. Among authors: kang m. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6710-6714. doi: 10.1166/jnn.2019.17106. J Nanosci Nanotechnol. 2019. PMID: 31027015

5

Effect of Various Geometry Parameters on the Performance of Nanoplate Field Effect Transistor with Negative Capacitance.

Woo C, Lee JK, Kang M, Jeon J, Shin H. Woo C, et al. Among authors: kang m. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6736-6740. doi: 10.1166/jnn.2019.17104. J Nanosci Nanotechnol. 2019. PMID: 31027020

6

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.

Cho S, Kim S, Kang M, Baik S, Jeon J. Cho S, et al. Among authors: kang m. Micromachines (Basel). 2024 Mar 27;15(4):450. doi: 10.3390/mi15040450. Micromachines (Basel). 2024. PMID: 38675262 Free PMC article.

7

A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems.

Ro D, Min C, Kang M, Chang IJ, Lee HM. Ro D, et al. Among authors: kang m. Sensors (Basel). 2019 Dec 27;20(1):171. doi: 10.3390/s20010171. Sensors (Basel). 2019. PMID: 31892184 Free PMC article.

8

Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO_X/TaN Memristors.

Cho Y, Kim J, Kang M, Kim S. Cho Y, et al. Among authors: kang m. Materials (Basel). 2023 Feb 17;16(4):1687. doi: 10.3390/ma16041687. Materials (Basel). 2023. PMID: 36837316 Free PMC article.

9

Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process.

Kim M, Ju D, Kang M, Kim S. Kim M, et al. Among authors: kang m. Nanomaterials (Basel). 2023 Oct 28;13(21):2859. doi: 10.3390/nano13212859. Nanomaterials (Basel). 2023. PMID: 37947704 Free PMC article.

10

Forming-Free Tunable Analog Switching in WO_x/TaO_x Heterojunction for Emulating Electronic Synapses.

Mahata C, Pyo J, Jeon B, Ismail M, Kang M, Kim S. Mahata C, et al. Among authors: kang m. Materials (Basel). 2022 Dec 12;15(24):8858. doi: 10.3390/ma15248858. Materials (Basel). 2022. PMID: 36556662 Free PMC article.

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