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4H-SiC surface morphology after Al ion implantation and annealing with C-cap.
J Microsc. 2020 Dec;280(3):229-240. doi: 10.1111/jmi.12933. Epub 2020 Jun 19.
J Microsc. 2020.
PMID: 32495384
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC.
Parisini A, Parisini A, Nipoti R.
Parisini A, et al. Among authors: nipoti r.
J Phys Condens Matter. 2017 Jan 25;29(3):035703. doi: 10.1088/1361-648X/29/3/035703. Epub 2016 Nov 21.
J Phys Condens Matter. 2017.
PMID: 27869645
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Native Silicon Oxide Properties Determined by Doping.
Della Ciana M, Kovtun A, Summonte C, Candini A, Cavalcoli D, Gentili D, Nipoti R, Albonetti C.
Della Ciana M, et al. Among authors: nipoti r.
Langmuir. 2023 Sep 5;39(35):12430-12451. doi: 10.1021/acs.langmuir.3c01652. Epub 2023 Aug 22.
Langmuir. 2023.
PMID: 37608587
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