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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors.
Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Si M, et al. Among authors: cho k. Nano Lett. 2021 Jan 13;21(1):500-506. doi: 10.1021/acs.nanolett.0c03967. Epub 2020 Dec 29. Nano Lett. 2021. PMID: 33372788
Theoretical Demonstration of the Ionic Barristor.
Nie Y, Hong S, Wallace RM, Cho K. Nie Y, et al. Among authors: cho k. Nano Lett. 2016 Mar 9;16(3):2090-5. doi: 10.1021/acs.nanolett.6b00193. Epub 2016 Feb 11. Nano Lett. 2016. PMID: 26854585
Origin of Indium Diffusion in High-k Oxide HfO2.
Hu Y, Wang C, Dong H, Wallace RM, Cho K, Wang WH, Wang W. Hu Y, et al. Among authors: cho k. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7595-600. doi: 10.1021/acsami.6b01068. Epub 2016 Mar 10. ACS Appl Mater Interfaces. 2016. PMID: 26939534
9,767 results