Chen YC - Search Results

1

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions.

Chen YC, Lin CC, Chang YF. Chen YC, et al. Micromachines (Basel). 2021 Jan 3;12(1):50. doi: 10.3390/mi12010050. Micromachines (Basel). 2021. PMID: 33401642 Free PMC article.

2

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application.

Chen YC, Lin CC, Hu ST, Lin CY, Fowler B, Lee J. Chen YC, et al. Sci Rep. 2019 Aug 27;9(1):12420. doi: 10.1038/s41598-019-48932-5. Sci Rep. 2019. PMID: 31455881 Free PMC article.

3

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications.

Chen YC , Hu ST , Lin CY , Fowler B , Huang HC , Lin CC , Kim S , Chang YF , Lee JC . Chen YC , et al. Nanoscale. 2018 Aug 23;10(33):15608-15614. doi: 10.1039/c8nr04766a. Nanoscale. 2018. PMID: 30090909

4

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Ji L, Chang YF, Fowler B, Chen YC, Tsai TM, Chang KC, Chen MC, Chang TC, Sze SM, Yu ET, Lee JC. Ji L, et al. Among authors: chen mc, chen yc. Nano Lett. 2014 Feb 12;14(2):813-8. doi: 10.1021/nl404160u. Epub 2013 Dec 30. Nano Lett. 2014. PMID: 24369783

5

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.

Zhou F, Chang YF, Chen YC, Wu X, Zhang Y, Fowler B, Lee JC. Zhou F, et al. Among authors: chen yc. Phys Chem Chem Phys. 2016 Jan 14;18(2):700-3. doi: 10.1039/c5cp06507k. Phys Chem Chem Phys. 2016. PMID: 26659556

6

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Chang YF, Fowler B, Chen YC, Zhou F, Pan CH, Chang TC, Lee JC. Chang YF, et al. Among authors: chen yc. Sci Rep. 2016 Feb 16;6:21268. doi: 10.1038/srep21268. Sci Rep. 2016. PMID: 26880381 Free PMC article.

7

Ultralow power switching in a silicon-rich SiN_y/SiN_x double-layer resistive memory device.

Kim S, Chang YF, Kim MH, Bang S, Kim TH, Chen YC, Lee JH, Park BG. Kim S, et al. Among authors: chen yc. Phys Chem Chem Phys. 2017 Jul 26;19(29):18988-18995. doi: 10.1039/c7cp03120c. Phys Chem Chem Phys. 2017. PMID: 28702540

8

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim S, Jung S, Kim MH, Chen YC, Chang YF, Ryoo KC, Cho S, Lee JH, Park BG. Kim S, et al. Among authors: chen yc. Small. 2018 May;14(19):e1704062. doi: 10.1002/smll.201704062. Epub 2018 Apr 17. Small. 2018. PMID: 29665257

9

Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory.

Kim S, Lin CY, Kim MH, Kim TH, Kim H, Chen YC, Chang YF, Park BG. Kim S, et al. Among authors: chen yc. Nanoscale Res Lett. 2018 Aug 23;13(1):252. doi: 10.1186/s11671-018-2660-9. Nanoscale Res Lett. 2018. PMID: 30141145 Free PMC article.

10

"Cut-and-Paste" Manufacture of Multiparametric Epidermal Sensor Systems.

Yang S, Chen YC, Nicolini L, Pasupathy P, Sacks J, Su B, Yang R, Sanchez D, Chang YF, Wang P, Schnyer D, Neikirk D, Lu N. Yang S, et al. Among authors: chen yc. Adv Mater. 2015 Nov 4;27(41):6423-30. doi: 10.1002/adma.201502386. Epub 2015 Sep 23. Adv Mater. 2015. PMID: 26398335

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