Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
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Li J, et al. Among authors: yin x, yin h.
Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793.
Nanomaterials (Basel). 2020.
PMID: 32326106
Free PMC article.