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Ultra-fast switching memristors based on two-dimensional materials.
Nat Commun. 2024 Mar 14;15(1):2334. doi: 10.1038/s41467-024-46372-y.
Nat Commun. 2024.
PMID: 38485722
Free PMC article.
Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.
Wu X, Luo C, Hao P, Sun T, Wang R, Wang C, Hu Z, Li Y, Zhang J, Bersuker G, Sun L, Pey K.
Wu X, et al. Among authors: bersuker g.
Adv Mater. 2018 Jan;30(2). doi: 10.1002/adma.201703025. Epub 2017 Nov 27.
Adv Mater. 2018.
PMID: 29178141
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Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?
Bradley SR, Bersuker G, Shluger AL.
Bradley SR, et al. Among authors: bersuker g.
J Phys Condens Matter. 2015 Oct 21;27(41):415401. doi: 10.1088/0953-8984/27/41/415401. Epub 2015 Sep 28.
J Phys Condens Matter. 2015.
PMID: 26414778
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Determination of free electron density in sequentially doped InxGa1-xAs by Raman spectroscopy.
Kort KR, Hung PY, Loh WY, Bersuker G, Banerjee S.
Kort KR, et al. Among authors: bersuker g.
Appl Spectrosc. 2015;69(2):239-42. doi: 10.1366/14-07602. Epub 2015 Jan 1.
Appl Spectrosc. 2015.
PMID: 25588191
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Raman spectroscopy studies of dopant activation and free electron density of In(0.53)Ga(0.47)As via sulfur monolayer doping.
Kort KR, Hung PY, Lysaght PD, Loh WY, Bersuker G, Banerjee S.
Kort KR, et al. Among authors: bersuker g.
Phys Chem Chem Phys. 2014 Apr 14;16(14):6539-43. doi: 10.1039/c4cp00111g. Epub 2014 Feb 26.
Phys Chem Chem Phys. 2014.
PMID: 24569809
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Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2.
Muñoz Ramo D, Shluger AL, Gavartin JL, Bersuker G.
Muñoz Ramo D, et al. Among authors: bersuker g.
Phys Rev Lett. 2007 Oct 12;99(15):155504. doi: 10.1103/PhysRevLett.99.155504. Epub 2007 Oct 12.
Phys Rev Lett. 2007.
PMID: 17995181
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