Lee GH - Search Results

1

Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb₂O₃ for 2D Electronics.

Ryu H, Kim H, Jeong JH, Kim BC, Watanabe K, Taniguchi T, Lee GH. Ryu H, et al. Among authors: lee gh. ACS Nano. 2024 May 21;18(20):13098-13105. doi: 10.1021/acsnano.4c01883. Epub 2024 May 4. ACS Nano. 2024. PMID: 38703120

2

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J. Lee GH, et al. Among authors: lee ch. ACS Nano. 2015 Jul 28;9(7):7019-26. doi: 10.1021/acsnano.5b01341. Epub 2015 Jun 22. ACS Nano. 2015. PMID: 26083310

3

Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals.

Lee Y, Chang Y, Ryu H, Kim JH, Watanabe K, Taniguchi T, Kim M, Lee GH. Lee Y, et al. Among authors: lee gh. ACS Appl Mater Interfaces. 2023 Feb 1;15(4):6092-6097. doi: 10.1021/acsami.2c18514. Epub 2022 Dec 28. ACS Appl Mater Interfaces. 2023. PMID: 36577086

4

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Lee GH, et al. Among authors: lee ch, lee dy, lee c. ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14. ACS Nano. 2013. PMID: 23924287

5

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

Cui X, Lee GH, Kim YD, Arefe G, Huang PY, Lee CH, Chenet DA, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen BS, Watanabe K, Taniguchi T, Muller DA, Low T, Kim P, Hone J. Cui X, et al. Among authors: lee ch, lee gh. Nat Nanotechnol. 2015 Jun;10(6):534-40. doi: 10.1038/nnano.2015.70. Epub 2015 Apr 27. Nat Nanotechnol. 2015. PMID: 25915194 Free article.

6

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

Rathi S, Lee I, Lim D, Wang J, Ochiai Y, Aoki N, Watanabe K, Taniguchi T, Lee GH, Yu YJ, Kim P, Kim GH. Rathi S, et al. Among authors: lee i, lee gh. Nano Lett. 2015 Aug 12;15(8):5017-24. doi: 10.1021/acs.nanolett.5b01030. Epub 2015 Jul 1. Nano Lett. 2015. PMID: 26091357

7

Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure.

Kwon J, Shin JC, Ryu H, Lee JY, Seo D, Watanabe K, Taniguchi T, Kim YD, Hone J, Lee CH, Lee GH. Kwon J, et al. Among authors: lee ch, lee jy, lee gh. Adv Mater. 2020 Oct;32(43):e2003567. doi: 10.1002/adma.202003567. Epub 2020 Sep 11. Adv Mater. 2020. PMID: 32914498

8

Tailoring Single- and Double-Sided Fluorination of Bilayer Graphene via Substrate Interactions.

Son J, Ryu H, Kwon J, Huang S, Yu J, Xu J, Watanabe K, Taniguchi T, Ji E, Lee S, Shin Y, Kim JH, Kim K, van der Zande AM, Lee GH. Son J, et al. Among authors: lee gh, lee s. Nano Lett. 2021 Jan 27;21(2):891-898. doi: 10.1021/acs.nanolett.0c03237. Epub 2020 Oct 20. Nano Lett. 2021. PMID: 33079559

9

Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS₂.

Kang S, Kim YS, Jeong JH, Kwon J, Kim JH, Jung Y, Kim JC, Kim B, Bae SH, Huang PY, Hone JC, Jeong HY, Park JW, Lee CH, Lee GH. Kang S, et al. Among authors: lee ch, lee gh. ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1245-1252. doi: 10.1021/acsami.0c18364. Epub 2020 Dec 23. ACS Appl Mater Interfaces. 2021. PMID: 33356110

10

Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices.

Shin Y, Kwon J, Jeong Y, Watanabe K, Taniguchi T, Im S, Lee GH. Shin Y, et al. Among authors: lee gh. Small. 2022 Jul;18(28):e2200882. doi: 10.1002/smll.202200882. Epub 2022 Jun 19. Small. 2022. PMID: 35719033

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