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Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma.
Micromachines (Basel). 2022 Jan 24;13(2):173. doi: 10.3390/mi13020173.
Micromachines (Basel). 2022.
PMID: 35208298
Free PMC article.
Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source.
Ji YJ, Kim HI, Choi SY, Kang JE, Ellingboe AR, Chandra H, Lee CW, Yeom GY.
Ji YJ, et al. Among authors: ellingboe ar.
ACS Appl Mater Interfaces. 2023 Jun 14;15(23):28763-28771. doi: 10.1021/acsami.3c02950. Epub 2023 Jun 3.
ACS Appl Mater Interfaces. 2023.
PMID: 37269552
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Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.
Kim KS, Kim KH, Ji YJ, Park JW, Shin JH, Ellingboe AR, Yeom GY.
Kim KS, et al. Among authors: ellingboe ar.
Sci Rep. 2017 Oct 19;7(1):13585. doi: 10.1038/s41598-017-14122-4.
Sci Rep. 2017.
PMID: 29051604
Free PMC article.
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