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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2011 3
2013 3
2014 2
2016 1
2017 6
2018 1
2019 2
2020 1
2021 6
2022 3
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27 results
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Page 1
Selective Doping in Silicon Carbide Power Devices.
Roccaforte F, Fiorenza P, Vivona M, Greco G, Giannazzo F. Roccaforte F, et al. Materials (Basel). 2021 Jul 14;14(14):3923. doi: 10.3390/ma14143923. Materials (Basel). 2021. PMID: 34300845 Free PMC article. Review.
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
Li F, Roccaforte F, Greco G, Fiorenza P, La Via F, Pérez-Tomas A, Evans JE, Fisher CA, Monaghan FA, Mawby PA, Jennings M. Li F, et al. Among authors: roccaforte f. Materials (Basel). 2021 Oct 5;14(19):5831. doi: 10.3390/ma14195831. Materials (Basel). 2021. PMID: 34640228 Free PMC article. Review.
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R. Schilirò E, et al. Among authors: roccaforte f. Nanomaterials (Basel). 2021 Dec 7;11(12):3316. doi: 10.3390/nano11123316. Nanomaterials (Basel). 2021. PMID: 34947665 Free PMC article.
Advances in the fabrication of graphene transistors on flexible substrates.
Fisichella G, Lo Verso S, Di Marco S, Vinciguerra V, Schilirò E, Di Franco S, Lo Nigro R, Roccaforte F, Zurutuza A, Centeno A, Ravesi S, Giannazzo F. Fisichella G, et al. Among authors: roccaforte f. Beilstein J Nanotechnol. 2017 Feb 20;8:467-474. doi: 10.3762/bjnano.8.50. eCollection 2017. Beilstein J Nanotechnol. 2017. PMID: 28326237 Free PMC article.
27 results