Fabrizio Roccaforte - Search Results

Year	Number of Results
2011	3
2013	3
2014	2
2016	1
2017	6
2018	1
2019	2
2020	1
2021	6
2022	3

1

Selective Doping in Silicon Carbide Power Devices.

Roccaforte F, Fiorenza P, Vivona M, Greco G, Giannazzo F. Roccaforte F, et al. Materials (Basel). 2021 Jul 14;14(14):3923. doi: 10.3390/ma14143923. Materials (Basel). 2021. PMID: 34300845 Free PMC article. Review.

2

Materials and Processes for Schottky Contacts on Silicon Carbide.

Vivona M, Giannazzo F, Roccaforte F. Vivona M, et al. Among authors: roccaforte f. Materials (Basel). 2021 Dec 31;15(1):298. doi: 10.3390/ma15010298. Materials (Basel). 2021. PMID: 35009445 Free PMC article. Review.

3

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

Roccaforte F, Greco G, Fiorenza P, Iucolano F. Roccaforte F, et al. Materials (Basel). 2019 May 15;12(10):1599. doi: 10.3390/ma12101599. Materials (Basel). 2019. PMID: 31096689 Free PMC article. Review.

4

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.

Li F, Roccaforte F, Greco G, Fiorenza P, La Via F, Pérez-Tomas A, Evans JE, Fisher CA, Monaghan FA, Mawby PA, Jennings M. Li F, et al. Among authors: roccaforte f. Materials (Basel). 2021 Oct 5;14(19):5831. doi: 10.3390/ma14195831. Materials (Basel). 2021. PMID: 34640228 Free PMC article. Review.

5

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.

Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F. Fiorenza P, et al. Among authors: roccaforte f. Nanomaterials (Basel). 2021 Jun 21;11(6):1626. doi: 10.3390/nano11061626. Nanomaterials (Basel). 2021. PMID: 34205790 Free PMC article.

6

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.

Giannazzo F, Schilirò E, Greco G, Roccaforte F. Giannazzo F, et al. Among authors: roccaforte f. Nanomaterials (Basel). 2020 Apr 22;10(4):803. doi: 10.3390/nano10040803. Nanomaterials (Basel). 2020. PMID: 32331313 Free PMC article. Review.

7

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS₂ Exfoliated on Gold and Transferred to an Insulating Substrate.

Panasci SE, Schilirò E, Greco G, Cannas M, Gelardi FM, Agnello S, Roccaforte F, Giannazzo F. Panasci SE, et al. Among authors: roccaforte f. ACS Appl Mater Interfaces. 2021 Jul 7;13(26):31248-31259. doi: 10.1021/acsami.1c05185. Epub 2021 Jun 24. ACS Appl Mater Interfaces. 2021. PMID: 34165956 Free PMC article.

8

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.

Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R. Schilirò E, et al. Among authors: roccaforte f. Nanomaterials (Basel). 2021 Dec 7;11(12):3316. doi: 10.3390/nano11123316. Nanomaterials (Basel). 2021. PMID: 34947665 Free PMC article.

9

Advances in the fabrication of graphene transistors on flexible substrates.

Fisichella G, Lo Verso S, Di Marco S, Vinciguerra V, Schilirò E, Di Franco S, Lo Nigro R, Roccaforte F, Zurutuza A, Centeno A, Ravesi S, Giannazzo F. Fisichella G, et al. Among authors: roccaforte f. Beilstein J Nanotechnol. 2017 Feb 20;8:467-474. doi: 10.3762/bjnano.8.50. eCollection 2017. Beilstein J Nanotechnol. 2017. PMID: 28326237 Free PMC article.

10

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.

Spera M, Greco G, Corso D, Di Franco S, Severino A, Messina AA, Giannazzo F, Roccaforte F. Spera M, et al. Among authors: roccaforte f. Materials (Basel). 2019 Oct 23;12(21):3468. doi: 10.3390/ma12213468. Materials (Basel). 2019. PMID: 31652698 Free PMC article.

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