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Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.
Sci Rep. 2017 Jan 3;7:39717. doi: 10.1038/srep39717.
Sci Rep. 2017.
PMID: 28045075
Free PMC article.
Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
Shih HY, Chu FC, Das A, Lee CY, Chen MJ, Lin RM.
Shih HY, et al.
Nanoscale Res Lett. 2016 Dec;11(1):235. doi: 10.1186/s11671-016-1448-z. Epub 2016 Apr 30.
Nanoscale Res Lett. 2016.
PMID: 27129687
Free PMC article.
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Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.
Shih HY, Lin MC, Chen LY, Chen MJ.
Shih HY, et al.
Nanotechnology. 2015 Jan 9;26(1):014002. doi: 10.1088/0957-4484/26/1/014002. Epub 2014 Dec 10.
Nanotechnology. 2015.
PMID: 25494474
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Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.
Shih HY, Shiojiri M, Chen CH, Yu SF, Ko CT, Yang JR, Lin RM, Chen MJ.
Shih HY, et al.
Sci Rep. 2015 Sep 2;5:13671. doi: 10.1038/srep13671.
Sci Rep. 2015.
PMID: 26329829
Free PMC article.
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