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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2018 | 2 |
2019 | 2 |
2020 | 3 |
2021 | 1 |
2024 | 0 |
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7 results
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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.
Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026.
Nanomaterials (Basel). 2018.
PMID: 30544659
Free PMC article.
Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.
Zhang Y, Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Yang J, Liu S.
Zhang Y, et al.
Nanoscale Res Lett. 2020 Feb 10;15(1):38. doi: 10.1186/s11671-020-3263-9.
Nanoscale Res Lett. 2020.
PMID: 32040646
Free PMC article.
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Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness.
Wang X, Liang F, Zhao D, Liu Z, Zhu J, Yang J.
Wang X, et al.
Nanoscale Res Lett. 2020 Oct 1;15(1):191. doi: 10.1186/s11671-020-03420-y.
Nanoscale Res Lett. 2020.
PMID: 33001341
Free PMC article.
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Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications.
Yu J, Wang L, Hao Z, Luo Y, Sun C, Wang J, Han Y, Xiong B, Li H.
Yu J, et al.
Adv Mater. 2020 Apr;32(15):e1903407. doi: 10.1002/adma.201903407. Epub 2019 Sep 5.
Adv Mater. 2020.
PMID: 31486182
Review.
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Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.
Zhang L, Wang R, Liu Z, Cheng Z, Tong X, Xu J, Zhang S, Zhang Y, Chen F.
Zhang L, et al.
Materials (Basel). 2021 Sep 16;14(18):5339. doi: 10.3390/ma14185339.
Materials (Basel). 2021.
PMID: 34576563
Free PMC article.
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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.
Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G.
Liang F, et al.
Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744.
Nanomaterials (Basel). 2018.
PMID: 30235861
Free PMC article.
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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.
Xing Y, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liang F, Liu S, Zhang L.
Xing Y, et al.
Nanoscale Res Lett. 2019 Mar 12;14(1):88. doi: 10.1186/s11671-019-2919-9.
Nanoscale Res Lett. 2019.
PMID: 30874975
Free PMC article.
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