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Tightly bound trions in monolayer MoS2.
Mak KF, He K, Lee C, Lee GH, Hone J, Heinz TF, Shan J. Mak KF, et al. Among authors: lee gh, lee c. Nat Mater. 2013 Mar;12(3):207-11. doi: 10.1038/nmat3505. Epub 2012 Dec 2. Nat Mater. 2013. PMID: 23202371
Atomically thin MoS₂: a new direct-gap semiconductor.
Mak KF, Lee C, Hone J, Shan J, Heinz TF. Mak KF, et al. Among authors: lee c. Phys Rev Lett. 2010 Sep 24;105(13):136805. doi: 10.1103/PhysRevLett.105.136805. Epub 2010 Sep 24. Phys Rev Lett. 2010. PMID: 21230799
High-strength chemical-vapor-deposited graphene and grain boundaries.
Lee GH, Cooper RC, An SJ, Lee S, van der Zande A, Petrone N, Hammerberg AG, Lee C, Crawford B, Oliver W, Kysar JW, Hone J. Lee GH, et al. Among authors: lee s, lee c. Science. 2013 May 31;340(6136):1073-6. doi: 10.1126/science.1235126. Science. 2013. PMID: 23723231
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