A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields.
Yan H, Feng Z, Shang S, Wang X, Hu Z, Wang J, Zhu Z, Wang H, Chen Z, Hua H, Lu W, Wang J, Qin P, Guo H, Zhou X, Leng Z, Liu Z, Jiang C, Coey M, Liu Z.
Yan H, et al.
Nat Nanotechnol. 2019 Feb;14(2):131-136. doi: 10.1038/s41565-018-0339-0. Epub 2019 Jan 7.
Nat Nanotechnol. 2019.
PMID: 30617308