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Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon.
Markevich A, Hudak BM, Madsen J, Song J, Snijders PC, Lupini AR, Susi T. Markevich A, et al. Among authors: snijders pc. J Phys Chem C Nanomater Interfaces. 2021 Jul 29;125(29):16041-16048. doi: 10.1021/acs.jpcc.1c03549. Epub 2021 Jul 19. J Phys Chem C Nanomater Interfaces. 2021. PMID: 34354792 Free PMC article.
Directed Atom-by-Atom Assembly of Dopants in Silicon.
Hudak BM, Song J, Sims H, Troparevsky MC, Humble TS, Pantelides ST, Snijders PC, Lupini AR. Hudak BM, et al. Among authors: snijders pc. ACS Nano. 2018 Jun 26;12(6):5873-5879. doi: 10.1021/acsnano.8b02001. Epub 2018 May 17. ACS Nano. 2018. PMID: 29750507 Free article.
Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice.
Ming F, Johnston S, Mulugeta D, Smith TS, Vilmercati P, Lee G, Maier TA, Snijders PC, Weitering HH. Ming F, et al. Among authors: snijders pc. Phys Rev Lett. 2017 Dec 29;119(26):266802. doi: 10.1103/PhysRevLett.119.266802. Epub 2017 Dec 27. Phys Rev Lett. 2017. PMID: 29328725
Homo-endotaxial one-dimensional Si nanostructures.
Song J, Hudak BM, Sims H, Sharma Y, Ward TZ, Pantelides ST, Lupini AR, Snijders PC. Song J, et al. Among authors: snijders pc. Nanoscale. 2017 Dec 21;10(1):260-267. doi: 10.1039/c7nr06968e. Nanoscale. 2017. PMID: 29210405
Itinerant Antiferromagnetism in RuO_{2}.
Berlijn T, Snijders PC, Delaire O, Zhou HD, Maier TA, Cao HB, Chi SX, Matsuda M, Wang Y, Koehler MR, Kent PR, Weitering HH. Berlijn T, et al. Among authors: snijders pc. Phys Rev Lett. 2017 Feb 17;118(7):077201. doi: 10.1103/PhysRevLett.118.077201. Epub 2017 Feb 15. Phys Rev Lett. 2017. PMID: 28256891
23 results