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Narrow luminescence linewidth of a silicon quantum dot.
Sychugov I, Juhasz R, Valenta J, Linnros J. Sychugov I, et al. Phys Rev Lett. 2005 Mar 4;94(8):087405. doi: 10.1103/PhysRevLett.94.087405. Epub 2005 Mar 4. Phys Rev Lett. 2005. PMID: 15783932 Free article.
Surface charge sensitivity of silicon nanowires: size dependence.
Elfström N, Juhasz R, Sychugov I, Engfeldt T, Karlström AE, Linnros J. Elfström N, et al. Among authors: sychugov i. Nano Lett. 2007 Sep;7(9):2608-12. doi: 10.1021/nl0709017. Epub 2007 Aug 11. Nano Lett. 2007. PMID: 17691849
Strong Absorption Enhancement in Si Nanorods.
Sychugov I, Sangghaleh F, Bruhn B, Pevere F, Luo JW, Zunger A, Linnros J. Sychugov I, et al. Nano Lett. 2016 Dec 14;16(12):7937-7941. doi: 10.1021/acs.nanolett.6b04243. Epub 2016 Nov 21. Nano Lett. 2016. PMID: 27960529
Probing silicon quantum dots by single-dot techniques.
Sychugov I, Valenta J, Linnros J. Sychugov I, et al. Nanotechnology. 2017 Feb 17;28(7):072002. doi: 10.1088/1361-6528/aa542b. Epub 2016 Dec 16. Nanotechnology. 2017. PMID: 27980232
36 results