Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation

Search Page

Filters

My NCBI Filters

Results by year

Table representation of search results timeline featuring number of search results per year.

Year Number of Results
1992 1
1994 2
1995 1
1997 1
1999 1
2000 4
2001 2
2003 1
2005 2
2006 1
2007 2
2008 4
2009 4
2010 4
2011 7
2012 2
2013 9
2014 11
2015 13
2016 15
2017 20
2018 17
2019 12
2020 24
2021 25
2022 29
2023 27
2024 15

Text availability

Article attribute

Article type

Publication date

Search Results

240 results

Results by year

Filters applied: . Clear all
Page 1
Showing results for multibit
Search for multibio instead (3 results)
Multibit racetrack memory.
Deger C. Deger C. Nanotechnology. 2020 Dec 4;31(49):495209. doi: 10.1088/1361-6528/abb42e. Nanotechnology. 2020. PMID: 32996467
Annihilation, conversion, and passing over of the reverse domains are considered as the three-state of ternary logic. We anticipate that multibit racetrack memory will influence the development of data storage platforms for emergent computing technologies....
Annihilation, conversion, and passing over of the reverse domains are considered as the three-state of ternary logic. We anticipate that …
Multibit NOT logic gate enabled by a function programmable optical waveguide.
Chen T, Dang Z, Ding Z, Liu Z, Zhang Z. Chen T, et al. Opt Lett. 2022 Jul 15;47(14):3519-3522. doi: 10.1364/OL.458516. Opt Lett. 2022. PMID: 35838718
Multibit logic gates are of great importance in optical switching and photonic computing. ...
Multibit logic gates are of great importance in optical switching and photonic computing. ...
Multibit memory operation of metal-oxide bi-layer memristors.
Stathopoulos S, Khiat A, Trapatseli M, Cortese S, Serb A, Valov I, Prodromakis T. Stathopoulos S, et al. Sci Rep. 2017 Dec 13;7(1):17532. doi: 10.1038/s41598-017-17785-1. Sci Rep. 2017. PMID: 29235524 Free PMC article.
Here, we introduce and evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We propose a programming methodology that allows for operating metal-oxide memristive devices as multibit …
Here, we introduce and evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via mul …
Two-dimensional multibit optoelectronic memory with broadband spectrum distinction.
Xiang D, Liu T, Xu J, Tan JY, Hu Z, Lei B, Zheng Y, Wu J, Neto AHC, Liu L, Chen W. Xiang D, et al. Nat Commun. 2018 Jul 27;9(1):2966. doi: 10.1038/s41467-018-05397-w. Nat Commun. 2018. PMID: 30054482 Free PMC article.
The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten dis …
The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin …
Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS(2) /h-BN/Graphene Heterostructure.
Gao F, Zhang X, Tan B, Zhang S, Zhang J, Jia D, Zhou Y, Hu P. Gao F, et al. Small. 2021 Nov;17(45):e2104459. doi: 10.1002/smll.202104459. Epub 2021 Oct 8. Small. 2021. PMID: 34622561
Here, the authors report an optoelectronic memory based on SnS(2) /h-BN/graphene heterostructure with an extremely low photo-generated hole tunneling barrier of 0.23 eV. This non-volatile multibit floating gate memory shows a high switching ratio of 10(6) and a large memor …
Here, the authors report an optoelectronic memory based on SnS(2) /h-BN/graphene heterostructure with an extremely low photo-generated hole …
Multibit MoS(2) Photoelectronic Memory with Ultrahigh Sensitivity.
Lee D, Hwang E, Lee Y, Choi Y, Kim JS, Lee S, Cho JH. Lee D, et al. Adv Mater. 2016 Nov;28(41):9196-9202. doi: 10.1002/adma.201603571. Epub 2016 Aug 26. Adv Mater. 2016. PMID: 27562539
A novel multibit MoS(2) photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS(2) flakes. ...
A novel multibit MoS(2) photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs a …
Multibit data storage states formed in plasma-treated MoS2 transistors.
Chen M, Nam H, Wi S, Priessnitz G, Gunawan IM, Liang X. Chen M, et al. ACS Nano. 2014 Apr 22;8(4):4023-32. doi: 10.1021/nn501181t. Epub 2014 Apr 1. ACS Nano. 2014. PMID: 24680193
New multibit memory devices are desirable for improving data storage density and computing speed. ...This multibit memory capability is hypothesized to be attributed to plasma-induced doping and ripple of the top MoS2 layers in a transistor, which could form an ambi …
New multibit memory devices are desirable for improving data storage density and computing speed. ...This multibit memory capa …
240 results